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| ARF463AP1 ARF463BP1 ARF463AP1G* ARF463BP1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. D RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE G S Common Source TO-247 125V 100A 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100MHz. They have been optimized for both linear and high efficiency classes of operation. * Specified 125 Volt, 81.36MHz Characteristics: * Output Power = 100 Watts. * Gain = 15dB (Class AB) * Efficiency = 75% (Class C) MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RJC TJ,TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25C Gate-Source Voltage Total Power Dissipation @ TC = 25C Junction to Case * Low Cost Common Source RF Package. * Low Vth thermal coefficient. * Low Thermal Resistance. * Optimized SOA for Superior Ruggedness. All Ratings: TC = 25C unless otherwise specified. ARF463A_BP1(G) UNIT Volts Amps Volts Watts C/W C 500 500 9 30 180 0.70 -55 to 150 300 Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 1 MIN TYP MAX UNIT Volts 500 5.0 25 250 100 2 3 3 4 VDS(ON) On State Drain Voltage IDSS IGSS gfs VGS(TH) (I D(ON) = 4.5A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Forward Transconductance (VDS = 25V, ID = 4.5A) Gate Threshold Voltage (VDS = VGS, ID = 50mA) A nA mhos 3-2006 050-4924 Rev B 5 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com DYNAMIC CHARACTERISTICS Symbol Ciss Coss Crss td(on) tr td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions VGS = 0V VDS = 50V f = 1 MHz VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP ARF463A_BP1(G) MAX UNIT 670 120 50 5.6 4.3 13.5 4.2 ns pF FUNCTIONAL CHARACTERISTICS Symbol GPS Characteristic Common Source Amplifier Power Gain Drain Efficiency Electrical Ruggedness VSWR 10:1 Test Conditions f = 81.36 MHz VGS = 0V VDD = 125V MIN TYP MAX UNIT dB % 13 70 15 75 Pout = 100W No Degradation in Output Power 1 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 30 25 20 GAIN (dB) 3000 Class C VDD = 150V Pout = 150W CAPACITANCE (pf) 1000 500 Ciss Coss 100 50 15 10 5 0 30 Crss 60 75 90 105 120 FREQUENCY (MHz) Figure 1, Typical Gain vs Frequency 45 10 .1 .5 1 5 10 50 200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 2, Typical Capacitance vs. Drain-to-Source Voltage 8 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 36 ID, DRAIN CURRENT (AMPERES) OPERATION HERE LIMITED BY RDS (ON) 100uS 6 10 5 1mS 4 10mS 1 .5 100mS 3-2006 2 050-4924 Rev B TJ = +125C TJ = -55C TJ = +25C 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 3, Typical Transfer Characteristics .1 TC =+25C TJ =+150C SINGLE PULSE DC 1 10 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 4, Typical Maximum Safe Operating Area ARF463A_BP1(G) 1.2 ID, DRAIN CURRENT (AMPERES) VGS(th), THRESHOLD VOLTAGE (NORMALIZED) 16 VGS=15V 10V 9V 1.1 12 1.0 8 8V 7.5V 7V 0.9 0.8 4 6.5V 6V 5.5V 0.7 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) Figure 5, Typical Threshold Voltage vs Temperature GPS, COMMON SOURCE AMPLIFIER GAIN (dB) 0 1 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 6, Typical Output Characteristics 160 Class C VDD = 150V 14 POUT, POWER OUT (WATTS) 120 f = 81.36 MHz 12 f = 81.36 MHz 10 Class C VDD = 150V 80 40 8 0 0 4 6 8 10 PIN, POWER IN (WATTS) Figure 7, Typical Power Out vs Power In 2 40 80 120 160 POUT, POWER OUT (WATTS) Figure 8, Typical Common Source Amplifier Gain vs Power Out 6 0 0.8 , THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.1 0.05 0.02 Note: PDM 0.01 0.005 0.01 SINGLE PULSE t1 t2 JC Peak TJ = PDM x ZJC + TC Duty Factor D = t1/t2 Z 0.001 10-5 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 10-4 10 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) 2.0 13.5 27 40 65 80 100 Zin () 24 - j 5.0 7.8 - j 11 2.1 - j 6.4 .74 - j 3.3 .30 + j .42 .46 + j 2.0 .87 + j 3.7 ZOL () 55 - j 4.8 41 - j 24 23 - j 26.2 13.6 - j 22 6.1 - j 14.2 4.2 - j 10.7 2.7 - j 7.1 Zin - Gate shunted with 25 IDQ = 50mA ZOL - Conjugate of optimum load for 100 Watts output at Vdd = 125V 050-4924 Rev B 3-2006 ARF463A_BP1(G) L4 C5 Bias 0 - 12V C7 R1 RF Input L2 C2 L1 R2 DUT C1 L3 C8 C6 + 125V RF Output C4 C5 C1 -- 820pF Unelco mounted at gate lead C2-C5 -- Arco 463 Mica trimmer C5-C8 -- 10nF 500V COG chip L1 -- 3t #18 .3" ID .25"L ~50nH L2 -- 3t #16 AWG .25" ID .3"L ~58nH L3 -- 10t #18 AWG .25 ID ~470nH L4 -- VK200-4B ferrite choke ~3uH R1-R2 -- 50 Ohm 1/2W Carbon DUT = ARF463A/B C3 81.36 MHz Test Circuit TO-247 Package Outline e3 100% Sn Plated 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 20.80 (.819) 21.46 (.845) Top View 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Dimensions in Millimeters and (Inches) NOTE: These two parts comprise a symmetric pair of RF power transistors and meet the same electrical specifications. The device pin-outs are the mirror image of each other to allow ease of use as a push-pull pair. Source 3.55 (.138) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Device ARF - AP1 ARF - BP1 Gate Drain Source Source Drain Gate 050-4924 Rev B 3-2006 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved. |
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